Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface

TL;DR

This study explores how polar discontinuity influences electronic properties at LaVO_3/SrTiO_3 interfaces, revealing conducting and insulating behaviors depending on interface configuration and orientation, with implications for interface engineering.

Contribution

It demonstrates the impact of polar discontinuity doping on the transport properties of LaVO_3/SrTiO_3 heterointerfaces, highlighting new interface configurations and their electronic behaviors.

Findings

(001)-oriented n-type interface is conducting with a thickness-dependent metal-insulator transition.

Insertion of SrVO_3 or SrO layers can induce insulating behavior at the interface.

(110) heterointerface remains insulating, indicating electronic reconstruction effects.

Abstract

We have investigated the transport properties of LaVO_3/SrTiO_3 Mott insulator/band insulator heterointerfaces for various configurations. The (001)-oriented n-type VO_2/LaO/TiO_2 polar discontinuity is conducting, exhibiting a LaVO_3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO_2/SrO/TiO_2 interface, formed by inserting a single layer of bulk metallic SrVO_3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions.