Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities

TL;DR

This paper demonstrates polariton lasing in single GaAs/GaAlAs micropillar cavities, showing high occupancy and mode competition, with evidence of self-interaction effects, advancing understanding of polariton-based light sources.

Contribution

It presents the first demonstration of polariton lasing in zero-dimensional micropillar cavities with detailed analysis of mode competition and interaction effects.

Findings

Polariton ground state occupancy reaches 10^4.

Mode competition observed under different excitation conditions.

Emission blueshift indicates self-interaction within polariton mode.

Abstract

Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occupancy is found to be as large as $10^{4}$. Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.