Critical Oxide Thickness for Efficient Single-walled Carbon Nanotube Growth on Silicon Using Thin SiO2 Diffusion Barriers

TL;DR

This study identifies a critical oxide thickness of 4 nm silicon dioxide as essential for enabling efficient single-walled carbon nanotube growth on silicon by preventing silicide formation that inhibits catalyst activity.

Contribution

It demonstrates that a 4 nm SiO2 layer acts as an effective diffusion barrier, allowing successful SWCNT growth on silicon surfaces by preventing catalyst silicide formation.

Findings

Silicide formation occurs on ultra-thin oxides due to metal diffusion.

Silicides inhibit SWCNT growth more than MWCNTs at high temperatures.

A 4 nm SiO2 layer is necessary to enable SWCNT growth on silicon.

Abstract

The ability to integrate carbon nanotubes, especially single-walled carbon nanotubes, seamlessly onto silicon would expand the range of applications considerably. Though direct integration using chemical vapor deposition is the simplest method, the growth of single-walled carbon nanotubes on bare silicon and on ultra-thin oxides is greatly inhibited due to the formation of a non-catalytic silicide. Using x-ray photoelectron spectroscopy, we show that silicide formation occurs on ultra-thin oxides due to thermally activated metal diffusion through the oxide. Silicides affect the growth of single-walled nanotubes more than multi-walled nanotubes due to the increased kinetics at the higher single-walled nanotube growth temperature. We demonstrate that nickel and iron catalysts, when deposited on clean silicon or ultra-thin silicon dioxide layers, begin to form silicides at relatively low temperatures, and that by 900C, all of the catalyst has been incorporated into the silicide, rendering it inactive for subsequent single-walled nanotube growth. We further show that a 4 nm silicon dioxide layer is the minimum diffusion barrier thickness which allows for efficient single-walled nanotube growth.