Strong reduction of field-dependent microwave surface resistance in YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ with sub-micrometric BaZrO$_3$ inclusions

TL;DR

Introducing sub-micrometric BaZrO$_3$ particles into YBa$_{2}$Cu$_{3}$O$_{7-}$ thin films significantly reduces the microwave surface resistance increase under magnetic fields, indicating enhanced vortex pinning.

Contribution

This study demonstrates that BaZrO$_3$ inclusions create deep pinning wells and alter vortex pinning behavior in YBa$_{2}$Cu$_{3}$O$_{7-}$ films, reducing microwave surface resistance.

Findings

Surface resistance increase under magnetic field is reduced by a factor of ~3.

BaZrO$_3$ inclusions lead to deep and steep pinning wells.

Pinning behavior changes from the pure film to the BaZrO$_3$-doped film.

Abstract

We observe a strong reduction of the field induced thin film surface resistance measured at high microwave frequency ($\nu=$47.7 GHz) in YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ thin films grown on SrTiO$_3$ substrates, as a consequence of the introduction of sub-micrometric BaZrO$_3$ particles. The field increase of the surface resistance is smaller by a factor of $\sim$3 in the film with BaZrO$_3$ inclusions, while the zero-field properties are not much affected. Combining surface resistance and surface reactance data we conclude (a) that BaZrO$_3$ inclusions determine very deep and steep pinning wells and (b) that the pinning changes nature with respect to the pure film.