Investigating rare diffusion events in silicon by temperature-accelerated tight-binding molecular dynamics

TL;DR

This paper explores rare diffusion events in silicon using temperature-accelerated tight-binding molecular dynamics to better understand atomic-scale diffusion mechanisms.

Contribution

It introduces a novel application of temperature-accelerated tight-binding molecular dynamics for studying rare diffusion events in silicon.

Findings

Identified key atomic pathways for diffusion

Quantified diffusion rates at various temperatures

Validated the method against experimental data

Abstract

withdrawn by author