GaAs:Mn nanowires grown by molecular beam epitaxy of (Ga,Mn)As at MnAs segregation conditions

TL;DR

This paper reports the growth of GaAs:Mn nanowires via molecular beam epitaxy under MnAs segregation conditions, revealing their density dependence on MnAs nanoislands and potential for nanospintronics applications.

Contribution

It demonstrates a method to grow ferromagnetic GaAs:Mn nanowires with controllable density using MnAs phase separation during molecular beam epitaxy.

Findings

Nanowire density correlates with MnAs nanoisland density.

Growth conditions influence MnAs nanoisland formation.

Nanowires exhibit combined one-dimensional and magnetic properties.

Abstract

GaAs:Mn nanowires were obtained on GaAs(001) and GaAs(111)B substrates by molecular beam epitaxial growth of (Ga,Mn)As at conditions leading to MnAs phase separation. Their density is proportional to the density of catalyzing MnAs nanoislands, which can be controlled by the Mn flux and/or the substrate temperature. Being rooted in the ferromagnetic semiconductor (Ga,Mn)As, the nanowires combine one-dimensional properties with the magnetic properties of (Ga,Mn)As and provide natural, self assembled structures for nanospintronics.