Self-directed growth of AlGaAs core-shell nanowires for visible light applications
C. Chen, S. Shehata, C. Fradin, R. LaPierre, C. Couteau, and G. Weihs
TL;DR
This paper demonstrates the self-directed growth of AlGaAs core-shell nanowires with a composition gradient, enabling potential carrier confinement for visible light applications, using molecular beam epitaxy.
Contribution
It introduces a method for growing AlGaAs nanowires with a core-shell structure and composition gradient via self-directed growth during molecular beam epitaxy.
Findings
Core-shell structure confirmed by micro-photoluminescence and EDX.
Al composition gradient creates a potential minimum for carriers.
Growth mechanism linked to adatom diffusion lengths.
Abstract
Al(0.37)Ga(0.63)As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core-shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core-shell structure formed during the growth as a consequence of the different Al and Ga adatom diffusion lengths.
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