A Monolithic Pixel Sensor in 0.15 micron Fully Depleted SOI Technology
Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero, Giubilato, Lindsay Glesener, Chinh Vu
TL;DR
This paper introduces a monolithic pixel sensor fabricated in 0.15 micron fully depleted SOI technology, demonstrating its initial characterization and response to charged particles using a 1.35 GeV electron beam.
Contribution
It presents the design and first characterization results of a monolithic pixel sensor in 0.15 micron fully depleted SOI technology.
Findings
Sensor successfully characterized with electron beam
Pixel response to charged particles demonstrated
First results indicate promising performance
Abstract
This letter presents the design of a monolithic pixel sensor with 10x10 micron^2 pixels in OKI 0.15 micron fully depleted SOI technology and first results of its characterisation. The response of the chip to charged particles has been studied on the 1.35 GeV electron beam at the LBNL ALS.
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