Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi

TL;DR

This paper investigates the magnetoresistance properties of DyNiBi, revealing negative giant magnetoresistance below 200 K linked to a metal-insulator transition, and positive magnetoresistance at low temperatures influenced by impurities.

Contribution

It provides new insights into the magnetoresistance behavior of DyNiBi, including its scaling with magnetization and the effects of impurities on positive magnetoresistance.

Findings

Negative GMR below 200 K linked to metal-insulator transition

Positive MR at low temperatures can be suppressed by high fields

Impurity phases slightly affect positive magnetoresistance

Abstract

The semiconducting half-Heulser compound DyNiBi shows a negative giant magnetoresistance (GMR) below 200 K. Except for a weak deviation, this magnetoresistance scales roughly with the square of the magnetization in the paramagnetic state, and is related to the metal-insulator transition. At low temperature, a positive magnetoresistance is found, which can be suppressed by high fields. The magnitude of the positive magnetoresistance changes slightly with the amount of impurity phase.