Detection of low energy single ion impacts in micron scale transistors at room temperature

TL;DR

This study demonstrates room-temperature detection of single ion impacts in micron-scale FETs by monitoring source-drain current changes, enabling precise doping and defect studies.

Contribution

It introduces a method for detecting single ion impacts in FETs at room temperature using current monitoring, facilitating advanced device doping and defect analysis.

Findings

Single ion impacts cause measurable current changes in FETs.

Implant damage can be repaired via rapid thermal annealing.

Method enables iterative doping and defect studies.

Abstract

We report the detection of single ion impacts through monitoring of changes in the source-drain currents of field effect transistors (FET) at room temperature. Implant apertures are formed in the interlayer dielectrics and gate electrodes of planar, micro-scale FETs by electron beam assisted etching. FET currents increase due to the generation of positively charged defects in gate oxides when ions (121Sb12+, 14+, Xe6+; 50 to 70 keV) impinge into channel regions. Implant damage is repaired by rapid thermal annealing, enabling iterative cycles of device doping and electrical characterization for development of single atom devices and studies of dopant fluctuation effects.