Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance

TL;DR

This paper uses Monte Carlo simulations to analyze the intrinsic transport properties, capacitive effects, and dynamic performance of coaxially gated CNTFETs, comparing them with silicon nanowire MOSFETs.

Contribution

It provides detailed Monte Carlo simulation results including electron-phonon scattering, and evaluates the impact of capacitive effects on CNTFET performance.

Findings

CNTFETs show promising high performance potential.

Capacitive effects significantly influence DC characteristics.

CNTFETs outperform Si nanowire MOSFETs in certain metrics.

Abstract

Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to develop the appropriate technology and to explore DC characteristics of carbon nanotube field effect transistor (CNTFET). In this work, we present results of Monte Carlo simulation of a coaxially gated CNTFET including electron-phonon scattering. Our purpose is to present the intrinsic transport properties of such material through the evaluation of electron mean-free-path. To highlight the potential of high performance level of CNTFET, we then perform a study of DC characteristics and of the impact of capacitive effects. Finally, we compare the performance of CNTFET with that of Si nanowire MOSFET.