Local gating of a graphene Hall bar by graphene side gates

TL;DR

This study explores how graphene side gates influence the magnetotransport properties of a graphene Hall bar, demonstrating control over resistance in both zero and quantum Hall regimes through side gating effects.

Contribution

It introduces a model for side gating effects in graphene Hall bars and shows their effectiveness in modulating transport properties in different magnetic regimes.

Findings

Side gates create a 90 nm penetration depth of the gating field.

Side gates modify longitudinal and Hall resistances in quantum Hall regime.

Model of two parallel conducting channels explains side gating effects.

Abstract

We have investigated the magnetotransport properties of a single-layer graphene Hall bar with additional graphene side gates. The side gating in the absence of a magnetic field can be modeled by considering two parallel conducting channels within the Hall bar. This results in an average penetration depth of the side gate created field of approx. 90 nm. The side gates are also effective in the quantum Hall regime, and allow to modify the longitudinal and Hall resistances.