Realization of a semiconductor-based cavity soliton laser

TL;DR

This paper reports the development of a semiconductor-based cavity soliton laser with all-optical control and demonstrated motility, promising for robust all-optical processing applications.

Contribution

It introduces a novel cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure with phase-insensitive control and motility demonstration.

Findings

Successful realization of a semiconductor cavity soliton laser

All-optical, phase-insensitive control of solitonic states

Demonstration of motility of cavity solitons

Abstract

The realization of a cavity soliton laser using a vertical-cavity surface-emitting semiconductor gain structure coupled to an external cavity with a frequency-selective element is reported. All-optical control of bistable solitonic emission states representing small microlasers is demonstrated by injection of an external beam. The control scheme is phase-insensitive and hence expected to be robust for all-optical processing applications. The motility of these structures is also demonstrated.