Growth and optical properties of self-assembled InGaAs Quantum Posts
H. J. Krenner, C. Pryor, J. He, J. P. Zhang, Y.Wu, C. M. Morris, M. S., Sherwin, P. M. Petroff
TL;DR
This paper presents a method for growing height-controlled, dislocation-free InGaAs quantum posts on GaAs using MBE, and investigates their structural and optical properties with theoretical modeling and device integration.
Contribution
It introduces a novel growth technique for quantum posts and provides a comprehensive analysis of their optical and electronic properties, including tunability and dipole moments.
Findings
Successful growth of dislocation-free InGaAs quantum posts
Wide tunability of interband spectrum observed
Giant static dipole moments measured in QP devices
Abstract
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.
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