Observation of the Purcell effect in high-index-contrast micropillar
A. J. Bennett, D. J. P. Ellis, A. J. Shields, P. Atkinson, I. Farrer,, and D. A. Ritchie
TL;DR
This paper reports the experimental observation of the Purcell effect in high-index-contrast GaAs/Aluminium Oxide micropillar cavities, demonstrating enhanced radiative lifetime of quantum dots due to cavity quantum electrodynamics effects.
Contribution
It introduces a novel micropillar cavity design with high reflectivity and reduced mode volume, enabling clear observation of the Purcell effect in quantum dots.
Findings
Threefold increase in quantum dot exciton lifetime observed
High reflectivity achieved with fewer mirror layers
Potential for improved quantum dot-cavity applications
Abstract
We have fabricated pillar microcavity samples with Bragg mirrors consisting of alternate layers of GaAs and Aluminium Oxide. Compared to the more widely studied GaAs/AlAs micropillars these mirrors can achieve higher reflectivities with fewer layer repeats and reduce the mode volume. We have studied a number of samples containing a low density of InGaAs/GaAs self assembled quantum dots in a cavity and here report observation of a three fold enhancement in the radiative lifetime of a quantum dot exciton state due to the Purcell effect.
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