Theory of subgap interchain tunneling in quasi one-dimensional conductors
S. Brazovskii, S.I. Matveenko

TL;DR
This paper develops a theoretical framework for understanding subgap interchain tunneling in quasi-one-dimensional conductors with charge density waves, revealing power-law threshold behaviors and the effects of dimensionality and temperature.
Contribution
It introduces an instanton-based theory for coherent tunneling in the pseudogap region, accounting for both single-electron and bi-electron channels in quasi-1D systems.
Findings
Single-electron tunneling occurs below the gap down to the pair-breaking threshold.
Bi-electronic tunneling extends down to zero bias in the 1D regime.
Threshold behaviors follow power laws with exponents related to Fermi and phase velocities.
Abstract
We suggest a theory of internal coherent tunneling in the pseudogap region, when the applied voltage U is below the free electron gap 2Delta_0. We address quasi 1D systems, where the gap is originated by spontaneous lattice distortions of the Incommensurate Charge Density Wave (ICDW) type. Results can be adjusted also to quasi-1D superconductors. The instanton approach allows to calculate the interchain tunneling current both in single electron (amplitude solitons, i.e. spinons) and bi-electron (phase slips) channels. Transition rates are governed by a dissipative dynamics originated by emission of gapless phase excitations in the course of the instanton process. We find that the single-electron tunneling is allowed below the nominal gap 2Delta_0 down to the true pair-breaking threshold at 2W_as<2Delta, where W_as=2Delta/pi is the amplitude soliton energy. Most importantly, the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsSurface and Thin Film Phenomena · Vacuum and Plasma Arcs · Semiconductor materials and devices
