Predicting the Ionization Threshold for Carriers in Excited Semiconductors
David Snoke
TL;DR
This paper introduces formulas to predict the ionization fraction of carriers in photoexcited semiconductors, linking theoretical predictions with recent experimental observations in quantum wells.
Contribution
It provides a straightforward set of formulas for predicting carrier ionization in excited semiconductors, connecting theory with experimental data.
Findings
Formulas accurately predict ionization fractions in quantum well experiments
Theoretical results align with recent experimental observations
Simplifies understanding of carrier ionization in photoexcited semiconductors
Abstract
A simple set of formulas is presented which allows prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and double quantum wells.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.