Weak antilocalization in high mobility Ga(x)In(1-x)As/InP two-dimensional electron gases with strong spin-orbit coupling

TL;DR

This study investigates the spin-orbit interaction in high mobility GaInAs/InP two-dimensional electron gases, revealing strong spin precession effects and quantifying Rashba coupling via magnetotransport measurements across various gate voltages and temperatures.

Contribution

It provides a detailed analysis of the Rashba spin-orbit coupling in high mobility heterostructures using a validated theoretical model and experimental data.

Findings

Electron transport occurs in the strong spin precession regime across all gate voltages.

The Rashba spin-orbit coupling parameter was accurately determined.

Good agreement between model-based and oscillation pattern estimates.

Abstract

We have studied the spin-orbit interaction in a high mobility two-dimensional electron gas in a GaInAs/InP heterostructure as a function of an applied gate voltage as well as a function of temperature. Highly sensitive magnetotransport measurements of weak antilocalization as well as measurements of Shubnikov--de Haas oscillations were performed in a wide range of electron sheet concentrations. In our samples the electron transport takes place in the strong spin precession regime in the whole range of applied gate voltages, which is characterized by the spin precession length being shorter than the elastic mean free path. The magnitude of the Rashba spin-orbit coupling parameter was determined by fitting the experimental curves by a simulated quantum conductance correction according to a model proposed recently by Golub [Phys. Rev. B 71, 235310 (2005)]. A comparison of the Rashba coupling parameter extracted using this model with the values estimated from the analysis of the beating pattern in the Shubnikov--de Haas oscillations showed a good agreement.