Anomalous Hall effect in (In,Mn)Sb dilute magnetic semiconductor

TL;DR

This study investigates the anomalous Hall effect in (In,Mn)Sb, revealing its intrinsic nature and supporting Berry phase theory, through high magnetic field experiments and pressure variation analysis.

Contribution

It demonstrates that the anomalous Hall effect in (In,Mn)Sb is intrinsic and not proportional to magnetization, with a phenomenological model based on band shifts.

Findings

Anomalous Hall term is not proportional to magnetization.

Pressure modifies scattering but not the Hall effect.

Supports Berry phase theory for (III,Mn)V semiconductors.

Abstract

High magnetic field study of Hall resistivity in the ferromagnetic phase of (In,Mn)Sb allows one to separate its normal and anomalous components. We show that the anomalous Hall term is not proportional to the magnetization, and that it even changes sign as a function of magnetic field. We also show that the application of pressure modifies the scattering process, but does not influence the Hall effect. These observations suggest that the anomalous Hall effect in (In,Mn)Sb is an intrinsic property and support the application of the Berry phase theory for (III,Mn)V semiconductors. We propose a phenomenological description of the anomalous Hall conductivity, based on a field-dependent relative shift of the heavy- and light-hole valence bands and the split-off band.