Non-Markovian hole spin kinetics in $p$-type GaAs quantum wells
P. Zhang, M. W. Wu

TL;DR
This paper investigates non-Markovian effects on heavy hole spin dephasing in p-type GaAs quantum wells, revealing slower dephasing and quantum spin beats due to memory effects in phonon scattering.
Contribution
It introduces a fully microscopic kinetic spin Bloch equation approach to analyze non-Markovian spin dynamics in p-type GaAs quantum wells, highlighting new phenomena.
Findings
Non-Markovian effects slow down spin dephasing.
Quantum spin beats are predicted due to memory effects.
Spin dephasing is influenced by the relation between precession and relaxation times.
Abstract
Based on fully microscopic kinetic spin Bloch equation approach, we show the non-Markovian effect in spin dephasing of heavy holes in -type GaAs quantum wells. The non-Markovian effect manifests itself in spin dephasing when the mean spin precession time is shorter than the momentum relaxation time. The spin dephasing becomes slower when the non-Markovian effect is important. Moreover, quantum spin beats due to the memory effect of the non-Markovian hole-longitudinal optical phonon scattering are predicted.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Magnetic properties of thin films
