Computer simulated heat flow dynamics in Silicon at low temperatures
H. Diedrich, R. Liberati

TL;DR
This study uses computer simulations to analyze heat flow in silicon at low temperatures, revealing rapid diffusion times and proposing experimental validation methods.
Contribution
It introduces a computer model linked to experimental data to simulate heat diffusion in silicon at low temperatures, highlighting rapid heat transfer characteristics.
Findings
Short diffusion transit times across long distances
Computer model effectively simulates heat flow dynamics
Proposes experimental setup for validation
Abstract
The thermal characteristics of silicon between 15 and 300 deg K are investigated by applying a computer program on the solution of the differential heat diffusion equation. The computer model is linked to high-purity silicon through a set of experimental data. The numerical results are given in graphic form and show, in particular, very short diffusion transit times across long distances. The computed figures require experimental confrontations; a test set-up is proposed.
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Taxonomy
TopicsSilicon and Solar Cell Technologies
