Carrier multiplication yields in CdSe and CdTe nanocrystals by transient photoluminescence

TL;DR

This study investigates carrier multiplication in CdSe and CdTe nanocrystals using transient photoluminescence, finding no evidence of CM at high photon energies despite previous reports suggesting efficiency.

Contribution

It provides a quantitative assessment of CM yields in CdSe and CdTe NCs using a sensitive photoluminescence technique, challenging prior claims of efficient CM in these materials.

Findings

No evidence of carrier multiplication in CdSe and CdTe NCs at photon energies above 3 Eg.

Transient photoluminescence decay analysis effectively detects biexciton signatures.

Results contrast with previous transient absorption studies suggesting high CM efficiency.

Abstract

Engineering semiconductors to enhance carrier multiplication (CM) could lead to increased photovoltaic cell performance and a significant widening of the materials range suitable for future solar technologies. Semiconductor nanocrystals (NCs) have been proposed as a favourable structure for CM enhancement, and recent measurements by transient absorption have shown evidence for highly efficient CM in lead chalcogenide and CdSe NCs. We report here an assessment of CM yields in CdSe and CdTe NCs by a quantitative analysis of biexciton and exciton signatures in transient photoluminescence decays. Although the technique is particularly sensitive due to enhanced biexciton radiative rates relative to the exciton, kradBX > 2 kradX, we find no evidence for CM in CdSe and CdTe NCs up to photon energies E > 3 Eg, well above previously reported relative energy thresholds.