Voltage and temperature dependencies of conductivity in gated graphene

TL;DR

This paper investigates how voltage and temperature affect the electrical conductivity of gated graphene, considering various scattering mechanisms and matching experimental data.

Contribution

It provides a detailed theoretical analysis of conductivity dependencies in gated graphene, incorporating disorder characteristics from STM data and phonon interactions.

Findings

Resistance peak behavior aligns with experimental measurements.

Voltage and temperature significantly influence conductivity.

Scattering mechanisms explain observed transport phenomena.

Abstract

The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by acoustic phonons. The calculations are based on the quasiclassical kinetic equation with the normalization condition fixed by surface charge. The gate-voltage and temperature effects on the resistance peak, which is centered at the point of intrinsic conductivity, are found to be in agreement with the transport measurements.