Implementing controlled-NOT gate based on free spin qubits with semiconductor quantum-dot array

TL;DR

This paper proposes a new method to implement a controlled-NOT gate using free electron spins in semiconductor quantum dots, avoiding spin-spin interactions by leveraging charge entanglement and single spin rotations.

Contribution

It introduces a novel CNOT gate construction in solid nanostructures that does not rely on spin-spin interactions, utilizing charge entanglement as an intermediate step.

Findings

Successfully constructs a CNOT gate using charge entanglement.

Demonstrates a method to generate spin entanglement via charge states.

Uses only single spin rotations for gate operation.

Abstract

Based on electron spins in semiconductor quantum dots as qubits, a new quantum controlled-NOT(CNOT) gate is constructed in solid nanostructure without resorting to spin-spin interactions. Single electron tunneling technology and coherent quantum-dot cellular automata architecture are used to generate an ancillary charge entangled state. Using the ancillary charge entangled state as an intermediate state, we obtain a spin entangled state and design a CNOT gate by using only single spin rotations.