Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature

TL;DR

This study demonstrates the synthesis of high-quality InN in InP(100) substrates using nitrogen ion implantation at elevated temperature, followed by annealing, with characterization confirming the formation of crystalline InN and its optical properties.

Contribution

It introduces a method for growing crystalline InN in InP substrates via nitrogen ion beam implantation at elevated temperature with detailed structural and optical characterization.

Findings

Successful growth of crystalline InN in InP substrates.

InN exhibits a direct band-to-band transition at ~1.06 eV.

Growth quality depends on implantation and annealing conditions.

Abstract

InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.