Photogalvanic effects in HgTe quantum wells
B. Wittmann, R. Ravash, H. Diehl, S. N. Danilov, Z. D. Kvon, S. A., Tarasenko, E. L. Ivchenko, N. N. Mikhailov, S. A. Dvoretsky, W. Prettl, and, S. D. Ganichev
TL;DR
This paper reports the observation of terahertz radiation-induced circular and linear photogalvanic effects in HgTe quantum wells, aligning with phenomenological theory predictions.
Contribution
First experimental demonstration of CPGE and LPGE in HgTe quantum wells under terahertz radiation, confirming theoretical models.
Findings
Observation of CPGE and LPGE in HgTe quantum wells
Current response matches phenomenological theory
Potential applications in terahertz optoelectronics
Abstract
We report on the observation of the terahertz radiation induced circular (CPGE) and linear (LPGE) photogalvanic effects in HgTe quantum wells. The current response is well described by the phenomenological theory of CPGE and LPGE.
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