Optical Characterisation of MOVPE Grown Vertically Correlated InAs/GaAs Quantum Dots
P. Hazdra, J. Voves, J. Oswald, K. Kuldova, A. Hospodkova, E., Hulicius, J. Pangrac
TL;DR
This paper investigates the optical properties of InAs/GaAs quantum dots grown by MOVPE, demonstrating photoreflectance spectroscopy as an effective tool for characterisation and growth optimisation of these nanostructures.
Contribution
It introduces the use of photoreflectance spectroscopy for detailed optical characterisation of MOVPE-grown quantum dots and their structures.
Findings
Photoreflectance spectroscopy effectively characterises wetting layers and spacers.
Growth optimisation benefits from optical characterisation techniques.
Quantum dot structures are successfully analysed using combined PL and photoreflectance.
Abstract
Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the low pressure metal-organic vapour phase epitaxy (LP-MOVPE) technique. Photoluminescence in combination with photomodulated reflectance spectroscopy were used as the main characterisation methods for the growth optimisation. Results show that photoreflectance spectroscopy is an excellent tool for characterisation of QD structures wetting layers (thickness and composition) and for identification of spacers in vertically stacked QDs structures.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Advanced Materials and Semiconductor Technologies · GaN-based semiconductor devices and materials