Dispersion Impact on Ballistic CNTFET n+-i-n+ Performances
P. Desgreys (LTCI), J. Gomes Da Silva (LTCI), D. Robert (LTCI)
TL;DR
This paper investigates how dispersion in nanotube diameter affects key performance metrics of CNTFETs, providing insights for designing more reliable carbon nanotube transistors.
Contribution
It introduces a compact model to analyze the impact of nanotube diameter dispersion on CNTFET performance metrics.
Findings
Dispersion significantly influences on-current Ion.
Ion/Ioff ratio varies with diameter dispersion.
Sub-threshold slope S is affected by nanotube diameter variations.
Abstract
The designs integrating the promising carbon nanotube transistors (CNTFET) will have to take into account the constraints implied by the strong dispersion inherent to nanotube manufacturing. This paper proposes to characterize the main CNTFET performances : on-current Ion, Ion/Ioff ratio and inverse sub-threshold slope S according to the dispersion on the nanotube diameter. For this purpose, we use a compact model suitable for testing several diameter values.
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Taxonomy
TopicsCarbon Nanotubes in Composites · Nanopore and Nanochannel Transport Studies · Graphene research and applications