Nanostructures, Magnetic Semiconductors and Spinelectronics
P. Kervalishvili
TL;DR
This paper reviews recent advances in nanostructured magnetic semiconductors, emphasizing the potential of diluted and wide bandgap semiconductors with controlled disorder for spintronic applications.
Contribution
It provides an overview of recent theoretical and experimental progress in developing magnetic semiconductors using nanostructures and controlled disorder.
Findings
Diluted and wide bandgap semiconductors are promising for spintronics.
Controlled disorder and molecular structures are key for magnetic semiconductor development.
Recent advances suggest new pathways for magnetic semiconductor fabrication.
Abstract
A short overview is given of recent advances in the field of nanosemiconductors, which are suitable as materials for spin polarized transport of charge carriers. On the basis of last theoretical and experimental achievements it is shown that development of diluted and wide forbidden zone semiconductors with controlled disorders as well as their molecular structures is the very prospective way for magnetic semiconductors preparation.
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Taxonomy
TopicsAdvanced Materials and Semiconductor Technologies · Chemical and Physical Properties of Materials · Heusler alloys: electronic and magnetic properties