A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection
Mariano A. Zimmler, Jiming Bao, Ilan Shalish, Wei Yi, Venkatesh, Narayanamurti, Federico Capasso

TL;DR
This paper introduces a novel two-colour heterojunction nanowire LED that uses tunnel injection to produce ultraviolet, visible, or infrared light depending on voltage polarity, enabling dual-wavelength emission from a single device.
Contribution
It presents a new nanowire heterostructure device that allows selective two-colour electroluminescence controlled by voltage polarity, with a proposed tunnelling-based model explaining the emission mechanisms.
Findings
Ultraviolet and visible light emitted from GaN nanowire.
Infrared light emitted from silicon substrate.
Voltage polarity controls emission wavelength.
Abstract
We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate. We propose a model, which explains the key features of the data, based on electron tunnelling from the valence band of one semiconductor into the conduction band of the other semiconductor. For example, for one polarity of the applied voltage, given a sufficient potential energy difference between the two semiconductors,…
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