On-Chip Matching Networks for Radio-Frequency Single-Electron-Transistors

TL;DR

This paper demonstrates an on-chip superconducting LC matching network for RF-SSETs, achieving improved matching, lower parasitic capacitance, and enhanced sensitivity close to the shot noise limit.

Contribution

It introduces a superconducting on-chip matching network for RF-SSETs, reducing parasitic effects and dissipation compared to commercial inductors.

Findings

Lower parasitic capacitance improves RF matching.

Superconducting network exhibits negligible dissipation.

Charge sensitivity approaches shot noise limit.

Abstract

In this letter, we describe operation of a radio-frequency superconducting single electron transistor (RF-SSET) with an on-chip superconducting LC matching network consisting of a spiral inductor L and its capacitance to ground. The superconducting network has a lower parasitic capacitance and gives a better matching for the RF-SSET than does a commercial chip inductor. Moreover, the superconducting network has negligibly low dissipation, leading to sensitive response to changes in the RF-SSET impedance. The charge sensitivity 2.4*10^-6 e/(Hz)^1/2 in the sub-gap region and energy sensitivity of 1.9 hbar indicate that the RF-SSET is operating in the vicinity of the shot noise limit.