Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime

TL;DR

This paper investigates the current-voltage behavior of semiconductor/ferromagnet junctions in the spin blockade regime, revealing a current stabilization effect where current saturates at high voltages, and explores transient current dynamics.

Contribution

It provides the first detailed analysis of current-voltage characteristics considering contact resistance in spin blockade junctions, highlighting a stabilization phenomenon.

Findings

Current density saturates at high voltages.

Contact resistance influences current stabilization.

Transient current behavior is characterized.

Abstract

It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage the current density through the junction saturates at a specific value. The transient behavior of the current density is also investigated.