Analysis of atomic depth profiles directly extracted from Rutherford backscattering data for co-sputtered and ion irradiated Au-Ni films

TL;DR

This study uses Rutherford backscattering spectrometry to analyze atomic depth profiles in Au-Ni films, revealing how ion irradiation affects element distribution and interface spreading.

Contribution

It introduces a direct analytical method to extract atomic depth profiles from RBS data for irradiated Au-Ni films, highlighting ion-induced atomic distribution changes.

Findings

Au signal counts decrease with ion dose

Atomic profiles fitted with error functions

Ion fluence influences interface spreading rates

Abstract

Co-sputtered Au-Ni thin films having thickness of 30 nm were deposited on Si(100) substrates and irradiated with 160 keV ^{40}Ar^{+} under ambient condition at a number of fluences and analyzed using Rutherford backscattering spectrometry (RBS). The variation of Au signal counts in the RBS spectra with ion dose has been investigated. The distribution of Au, Ni and Si atoms over various depths within the as deposited and irradiated samples have been computed using the backscattering data by means of a direct analytical method. Au and Si profiles have been fitted with error function and the relative changes in variance for various ion fluences compared to that of as deposited profiles have been studied. The spreading rates of different constituents across the interface due to Ar ion impact have also been discussed.