Engineering Silicon Nanocrystals: Theoretical study of the effect of Codoping with Boron and Phosphorus
Federico Iori, Elena Degoli, Rita Magri, Ivan Marri, G. Cantele, D., Ninno, F. Trani, O. Pulci, Stefano Ossicini

TL;DR
This study uses ab-initio calculations to demonstrate that impurity doping, especially codoping with boron and phosphorus, can significantly modify the optical and electronic properties of silicon nanocrystals, enabling tunable light absorption and emission.
Contribution
It provides a detailed theoretical analysis showing how controlled doping and codoping influence silicon nanocrystals' optical properties, including band-edge states and Stokes shifts.
Findings
Codoped nanocrystals have lowest formation energies near the surface.
Doping causes a red-shift in absorption thresholds.
Many-body effects significantly influence emission spectra.
Abstract
We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with either one or two atomic species, a significant modification of both the absorption and the emission of light can be achieved. We have considered impurities, either boron or phosphorous (doping) or both (codoping), located at different substitutional sites of silicon nanocrystals with size ranging from 1.1 nm to 1.8 nm in diameter. We have found that the codoped nanocrystals have the lowest impurity formation energies when the two impurities occupy nearest neighbor sites near the surface. In addition, such systems present band-edge states localized on the impurities giving rise to a red-shift of the absorption thresholds with respect to that of…
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