Charge accumulation at the boundaries of a graphene strip induced by a gate voltage: Electrostatic approach

TL;DR

This paper analytically investigates charge distribution in a graphene strip under gate voltage, revealing boundary charge accumulation and implications for edge states in quantum Hall regimes, relevant for nanoelectronics.

Contribution

It provides an analytical model of charge profiles in graphene strips, highlighting boundary accumulation and its effects on edge states in quantum Hall conditions.

Findings

Strong charge accumulation occurs at strip boundaries.

Doubling of edge states predicted in quantum Hall regime.

Implications for graphene nanoelectronics applications.

Abstract

Distribution of charge induced by a gate voltage in a graphene strip is investigated. We calculate analytically the charge profile and demonstrate a strong(macroscopic) charge accumulation along the boundaries of a micrometers-wide strip. This charge inhomogeneity is especially important in the quantum Hall regime where we predict the doubling of the number of edge states and coexistence of two different types of such states. Applications to graphene-based nanoelectronics are discussed.