Graphene based spin field effect transistor

TL;DR

This paper proposes a graphene nanoribbon-based spin FET that uses electrical control of exchange interaction for spin manipulation, demonstrating potential feasibility and stability considerations for device implementation.

Contribution

It introduces a novel graphene-based spin FET design utilizing electrical control of exchange interaction, highlighting its feasibility and stability conditions.

Findings

Feasibility of graphene spin FET with 5 meV exchange bias.

Device stability depends on nanoribbon width to maintain Dirac point.

Electrical control enables spin manipulation without strong spin-orbit coupling.

Abstract

A spin field effect transistor (FET) is proposed by utilizing a graphene nanoribbon as the channel. Similar to the conventional spin FETs, the device involves ferromagnetic metals as a source and drain; they, in turn, are connected to the graphene channel. Due to the negligible spin-orbital coupling in the carbon based materials, the bias can accomplishes spin manipulation by means of electrical control of electron exchange interaction with a ferromagnetic dielectric attached to the nanoribbon between source and drain. The numerical estimations show the feasibility of graphene-based spin FET if a bias varies exchange interaction on the amount around 5 meV. It was shown that the device stability to the thermal dispersion can provide the armchair nanoribbons of specific width that keeps the Dirac point in electron dispersion law.