Positive and negative pressure effects on the magnetic ordering and the Kondo effect in the compound Ce2RhSi3
T. Nakano, Kausik Sengupta, Sudhindra Rayaprol, M. Hedo, Y. Uwatoko, and E.V. Sampathkumaran

TL;DR
This study investigates how positive and negative pressure influence magnetic ordering and the Kondo effect in Ce2RhSi3 through various measurements and high-pressure experiments, revealing its position on the Doniach phase diagram and a quantum critical point near 4 GPa.
Contribution
It provides new insights into pressure effects on magnetic and electronic properties of Ce2RhSi3, including the identification of the quantum critical point and the compound's placement on the Doniach diagram.
Findings
Ce2RhSi3 orders antiferromagnetically at 7 K.
Quantum critical point is near 4 GPa.
Pressure influences the Kondo and magnetic interactions.
Abstract
The competition between magnetic ordering and the Kondo effect in Ce2RhSi3, ordering antiferromagnetically at 7 K, is investigated by the measurements of magnetization, heat capacity and electrical resistivity on the solid solutions, Ce(2-x)La(x)RhSi3, Ce(2-y)Y(y)RhSi3, and Ce2RhSi(3-z)Ge(z), as well as by high pressure studies on this compound. The trends in the Kondo and Neel temperature variations among these alloys are compared to infer the roles of unit-cell volume and electronic structure changes. On the basis of the results, we infer that this compound lies at the peak of Doniach-magnetic-phase-diagram. The high pressure electrical resistivity data indicate that the quantum critical point for this compound is in the vicinity of 4 GPa.
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