Pyroelectric Effect Induced by the Built-in Field in the p-n Junction of the Quantum Paraelectric PbTe: Experimental Study

TL;DR

This study reports the first experimental observation of a pyroelectric effect in a non-polar semiconductor, specifically in the p-n junction of PbTe, driven by temperature-dependent electric dipoles.

Contribution

It demonstrates the existence of a pyroelectric effect in a non-polar semiconductor and provides a quantitative theoretical model explaining the experimental results.

Findings

Pyroelectric coefficient around 10^(-3) μC/cm^2K at 40-80 K

Observation of periodic and single-pulse pyroelectric signals

Theoretical model accurately describes experimental data

Abstract

We report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction. The junction was illuminated by a chopped CO2 laser beam, and periodic and single-pulse pyroelectric signals were observed and measured as a function of temperature, reverse bias voltage and chopper frequency. The measured pyroelectric coefficient is about 10^(-3) microC/cm2K in the region of 40-80 K. The theoretical model describes quantitatively all experimental features. The time evolution of the temperature inside the junction region was reconstructed.