Quantum transport in electron Fabry-Perot interferometers
F. E. Camino, Wei Zhou, and V. J. Goldman

TL;DR
This paper presents experiments on electron Fabry-Perot interferometers in the integer quantum Hall regime, revealing conductance oscillations influenced by Coulomb interactions and device electrostatics, with implications for quantum coherence.
Contribution
First detailed experimental study of quantum-coherent conductance oscillations in electron Fabry-Perot interferometers within the integer quantum Hall regime, highlighting Coulomb effects and electrostatic influences.
Findings
Conductance oscillations observed on integer quantum Hall plateaus
Oscillation period depends linearly on front-gate voltage, inversely proportional to filling factor
Dominance of Coulomb interactions affects Landau level mixing and flux periodicity
Abstract
We report experiments on Fabry-Perot electron interferometers in the integer quantum Hall regime. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer, enclosing an approximately circular island. The interferometer is formed by counterpropagating chiral edge channels coupled by tunneling in the two constrictions. Interference fringes are observed as conductance oscillations, similar to the Aharonov-Bohm effect. Front gates deposited in etch trenches allow to fine-tune the device and to change the constriction filling f relative to the bulk filling. Quantum-coherent conductance oscillations are observed on the f = 1 - 4 plateaus. On plateau f we observe f conductance oscillations per fundamental flux period h/e. This is attributed to the dominance of the electron-electron Coulomb interaction, effectively mixing Landau level…
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