High-temperature PbTe diodes

TL;DR

This paper reports on the development and characterization of high-temperature PbTe diodes, demonstrating their rectification capabilities up to 200 K and analyzing their electrical and photosensor properties.

Contribution

It introduces two methods for fabricating PbTe diodes and provides detailed electrical and photosensor performance data across a wide temperature range.

Findings

Rectification observed up to 200 K

Ion-implanted diodes show low saturation current up to 400 mV reverse bias

Thermally diffused junctions operate up to 1 V reverse bias

Abstract

We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance x area product, the R0C time constant and the detectivity D* are presented.