Tensoresistive Effect in Single Crystal Microwires of Pbte Doped with Tl

TL;DR

This study investigates the tensoresistive effect in single crystal PbTe microwires doped with thallium, revealing enhanced effects at specific doping levels and discussing potential mechanisms behind these anomalies.

Contribution

It presents new experimental data on the tensoresistive effect in Tl-doped PbTe microwires and proposes a model involving impurity bands to explain observed anomalies.

Findings

Enhanced tensoresistive effect at x ~0.0025 Tl doping

Observation of resistance changes under elastic elongation

Discussion of resonance scattering and impurity band models

Abstract

Results of room temperature measurements of tensoresistive effect of thin single crystal microwires of Pb1-xTlxTe (x=0.0000 - 0.0025, d = 5 - 20 micrometers) obtained from the melted compound of corresponding composition by the filling of quartz capillary with the following crystallization of material are presented. For the samples corresponding to chemical composition with concentration of thallium x ~0,0025 an essential increase of tensoresistive effect (resistance changes for elastic elongations per unit length of a crystal) in comparison with nondoped samples is observed. Various mechanisms which can lead to observable anomalies, including resonance scattering are discussed. Obtained experimental results allow us to suppose that the observed peculiarities can be interpreted on the basis of model of an impurity band of Tl in PbTe.