Hyperfine-mediated gate-driven electron spin resonance

TL;DR

This paper investigates an all-electrical electron spin resonance in GaAs quantum dots driven by hyperfine interactions, revealing a novel mechanism that enables nuclear polarization detection and selective electron addressing.

Contribution

It introduces a new hyperfine-mediated mechanism for gate-driven electron spin resonance, supported by experimental and theoretical analysis.

Findings

Resonant frequency depends on hyperfine effective field

The mechanism allows detection of nuclear polarization

Device design enables selective addressing of electrons

Abstract

An all-electrical spin resonance effect in a GaAs few-electron double quantum dot is investigated experimentally and theoretically. The magnetic field dependence and absence of associated Rabi oscillations are consistent with a novel hyperfine mechanism. The resonant frequency is sensitive to the instantaneous hyperfine effective field, and the effect can be used to detect and create sizable nuclear polarizations. A device incorporating a micromagnet exhibits a magnetic field difference between dots, allowing electrons in either dot to be addressed selectively.