Spin-orbit-assisted electron-phonon interaction and the magnetophonon resonance in semiconductor quantum wells

TL;DR

This paper proposes a new spin-orbit-assisted electron-phonon interaction mechanism in semiconductor quantum wells, predicting unique anticrossing behaviors in magnetophonon resonance influenced by electron spin and filling factors.

Contribution

It introduces a novel spin-orbit-assisted electron-phonon coupling mechanism and predicts its effects on magnetophonon resonance in quantum wells.

Findings

Predicted anticrossings between cyclotron resonance and optical phonons.

Demonstrated dependence of anticrossings on electron spin polarization.

Identified qualitative features of the resonance shape and form.

Abstract

We introduce a spin-orbit assisted electron-phonon (e-ph) coupling mechanism for carriers in semiconductor quantum wells and predict qualitatively the form and shape of anticrossings between the cyclotron resonance (CR) and optical (LO and TO) phonons. Since this e-ph interaction involves the electron spin it makes the predicted TO-CR anticrossing dependent on the filling factor and therefore on the polarization of the 2D electron gas in the quantum well.