Driving-dependent damping of Rabi oscillations in two-level semiconductor systems

TL;DR

This paper explains how non-Markovian dephasing reservoirs cause damping of Rabi oscillations in two-level semiconductor systems, with a model matching experimental observations.

Contribution

It introduces a general approach to describe damping in driven two-level systems interacting with non-Markovian environments, highlighting the dependence on driving field intensity.

Findings

Dephasing rate depends on driving-field intensity.

Damping arises from different environmental dephasing mechanisms.

Model aligns well with experimental data.

Abstract

We propose a mechanism to explain the nature of the damping of Rabi oscillations with increasing driving-pulse area in localized semiconductor systems, and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and non-stationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.