An Improved Process for Fabricating High-Mobility Organic Molecular Crystal Field-Effect Transistors

TL;DR

This paper introduces an improved fabrication process for high-mobility organic molecular crystal FETs that simplifies manufacturing while maintaining high electrical performance, achieving mobilities comparable to state-of-the-art devices.

Contribution

The authors developed a new process eliminating the need for silanized wafers and fragile film handling, enabling efficient production of high-mobility organic FETs with simplified steps.

Findings

Achieved electrical mobilities around 10 cm^2/Vs.

Device exhibits hole conduction with a threshold voltage near -9V.

Maintained high performance despite process simplifications.

Abstract

In this paper we present an improved process for producing elastomer transistor stamps and high-mobility organic field-effect transistors (FETs) based on semiconducting acene molecular crystals. In particular, we have removed the need to use a silanized Si wafer for curing the stamps and to handle a fragile micron-thickness polydimethylsiloxane (PDMS) insulating film and laminate it, bubble free, against the PDMS transistor stamp. We find that despite the altered design, rougher PDMS surface, and lamination and measurement of the device in air, we still achieve electrical mobilities of order 10 cm^2/Vs, comparable to the current state of the art in organic FETs. Our device shows hole conduction with a threshold voltage of order -9V, which corresponds to a trap density of 1.4 x 10^10 cm^-2.