Terahertz Parametric Gain in Semiconductor Superlattices
Timo Hyart, Alexey V. Shorokhov, Kirill N. Alekseev

TL;DR
This paper demonstrates the theoretical possibility of phase-sensitive parametric amplification in semiconductor superlattices, enabling efficient THz radiation conversion without negative differential conductance.
Contribution
It introduces a novel theoretical approach for THz parametric gain in superlattices that avoids destructive high-field domains.
Findings
Feasibility of phase-sensitive parametric amplification established
No need for negative differential conductance conditions
Potential for efficient THz frequency conversion
Abstract
We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. Action of ac electric field causes oscillations of electron's effective mass in miniband, which result in a parametric resonance. We have established a theoretical feasibility of phase-sensitive parametric amplification at the resonance. The parametric amplification does not require operation in conditions of negative differential conductance. Therefore a formation of destructive domains of high electric field inside the superlattice can be prevented. Here we concentrate on the parametric up- and down-conversion of electromagnetic radiation from available frequencies to desirable THz frequency range.
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Taxonomy
TopicsTerahertz technology and applications · Superconducting and THz Device Technology · Semiconductor Quantum Structures and Devices
