Green's function approach to transport through a gate-all-around Si nanowire under impurity scattering

TL;DR

This paper uses a Green's function approach to analyze how ionized impurity scattering affects electron transport, density, and transconductance in gate-all-around silicon nanowires, revealing significant broadening and shifting effects.

Contribution

It introduces a self-consistent Green's function method to incorporate impurity scattering effects in nanoscale silicon wires, providing new insights into their transport properties.

Findings

Impurity scattering broadens and shifts local density of states.

Impurity scattering suppresses interference oscillations in density profiles.

Transconductance varies with temperature and impurity strength, differing from impurity-free cases.

Abstract

We investigate transport properties of gate-all-around Si nanowires using non-equilibrium Green's function technique. By taking into account of the ionized impurity scattering we calculate Green's functions self-consistently and examine the effects of ionized impurity scattering on electron densities and currents. For nano-scale Si wires, it is found that, due to the impurity scattering, the local density of state profiles loose it's interference oscillations as well as is broaden and shifted. In addition, the impurity scattering gives rise to a different transconductance as functions of temperature and impurity scattering strength when compared with the transconductance without impurity scattering.