Vicinal silicon surfaces: from step density wave to faceting

TL;DR

This study explores how electromigration induces faceting on vicinal silicon surfaces, revealing a two-stage process involving a step density wave and subsequent hill-and-valley formation, explained through a continuum model.

Contribution

It provides new insights into the faceting mechanisms on vicinal silicon surfaces under electromigration, highlighting the role of elastic interactions and surface stress.

Findings

Faceting occurs in two stages: step density wave formation and hill-and-valley structure development.

The wavelength of the step density wave is independent of surface orientation.

Surface stress angular dependence emerges from the step model.

Abstract

This paper investigates faceting mechanisms induced by electromigration in the regime where atomic steps are transparent. For this purpose we study several vicinal orientations by means of in-situ (optical diffraction, electronic microscopy) as well as ex-situ (AFM, microprofilometry) visualization techniques. The data show that faceting proceeds in two stages. The first stage is short and leads to the appearance of a step density wave, with a wavelength roughly independent of the surface orientation. The second stage is much slower, and leads to the formation of a hill-and-valley structure, the period of which depends on the initial surface orientation. A simple continuum model enables us to point out why the wavelength of the step density wave does not depend on the microscale details of the surface. The final wavelength is controlled by the competition between elastic step-step interaction and facet edge energy cost. Finally, the surface stress angular dependence is shown to emerge as a coarsed-grained picture from the step model.