Theory of the Pseudospin Resonance in Semiconductor Bilayers
Saeed H. Abedinpour, Marco Polini, A.H. MacDonald, B. Tanatar, M.P., Tosi, and G. Vignale
TL;DR
This paper develops a theoretical framework for the pseudospin resonance mode in semiconductor bilayers, analyzing how its energy and damping depend on layer separation, and explores potential applications in pseudospin-transfer oscillators.
Contribution
It provides a novel theoretical model describing the pseudospin resonance in semiconductor bilayers and its dependence on layer separation, with implications for device applications.
Findings
Resonance energy varies with layer separation
Damping of the mode depends on system parameters
Potential for transport-current driven pseudospin oscillators
Abstract
The pseudospin degree of freedom in a semiconductor bilayer gives rise to a collective mode analogous to the ferromagnetic resonance mode of a ferromagnet. We present a theory of the dependence of the energy and the damping of this mode on layer separation . Based on these results, we discuss the possibility of realizing transport-current driven pseudospin-transfer oscillators in semiconductors.
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