High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates

TL;DR

This paper investigates high-quality oxide Schottky junctions on heavily Nb-doped SrTiO3, demonstrating their rectifying behavior and hysteresis, with implications for electronic device fabrication.

Contribution

It introduces a fabrication process for oxide Schottky junctions with reduced dimensions and explores their electrical properties at high doping levels.

Findings

High-quality oxide Schottky junctions maintain rectification at doping >10^20 cm^(-3)

Junctions exhibit hysteretic current-voltage characteristics

Fabrication process enables device-scale junctions

Abstract

We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for doping concentration of the semiconductor larger than 10^20 cm^(-3). Moreover, the junctions show hysteretic current-voltage characteristics.